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| MPSW06 Discrete POWER & Signal Technologies MPSW06 C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 4.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPSW06 1.0 8.0 125 50 Units W mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . (c) 1997 Fairchild Semiconductor Corporation MPSW06 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICEO ICBO Collector-Emitter Sustaining Voltage* Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current I C = 1.0 mA, IB = 0 I E = 100 A, IC = 0 VCE = 60 V, IB = 0 VCB = 80 V, IE = 0 80 4.0 0.1 0.1 V V A A ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 10 mA, VCE = 1.0 V I C = 100 mA, VCE = 1.0 V I C = 100 mA, IB = 10 mA I C = 100 mA, VCE = 1.0 V 100 100 0.25 1.2 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 2.0 V, f = 100 MHz 100 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0 Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5 Vtf=4 Xtf=6 Rb=10) |
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